2N5416(1997) データシートの表示（PDF） - STMicroelectronics

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2N5416
(Rev.:1997)

SILICON PNP TRANSISTORS

STMicroelectronics 

2N5415

2N5416

SILICON PNP TRANSISTORS

s SGS-THOMSON PREFERRED SALESTYPES

s PNP TRANSISTOR

DESCRIPTION

The 2N5415, 2N5416 are high voltage silicon

epitaxial planar PNP transistors in Jedec TO-39

metal case designed for use in consumer and

industrial line-operated applications.

These devices are particularly suited as drivers in

high-voltage low current inverters, switching and

series regulators.

TO-39

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

VCBO

VCEO

VEBO

IC

IB

Ptot

Ptot

Tstg

Tj

Collector-Base Voltage (IE = 0)

Collector-Emitter Voltage (IB = 0)

Emitter-Base Voltage (IC = 0)

Collector Current

Base Current

Total Dissipation at Tc ≤ 25 oC

Total Dissipation at Tamb ≤ 50 oC

Storage Temperature

Max. Operating Junction Temperature

June 1997

Value

2N5415

2N5416

-200

-350

-200

-300

-4

-6

-1

-0.5

10

1

-65 to 200

200

Unit

V

V

V

A

A

W

W

oC

oC

1/4

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