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2N6661-2 データシートの表示(PDF) - Vishay Semiconductors

部品番号
コンポーネント説明
メーカー
2N6661-2
Vishay
Vishay Semiconductors Vishay
2N6661-2 Datasheet PDF : 6 Pages
1 2 3 4 5 6
2N6661, 2N6661-2, 2N6661JANTX, 2N6661JANTXV
www.vishay.com
Vishay Siliconix
SPECIFICATIONS (TA = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Static
Drain-Source Breakdown Voltage
VDS
VDS = 0 V, ID = 10 μA
VDS = VGS, ID = 1 mA
Gate-Source Threshold Voltage
VGS(th)
TA = - 55 °C
TA = 125 °C
Gate-Body Leakage
IGSS
VGS = ± 20 V
VDS = 0 V
TA = 125 °C
Zero Gate Voltage Drain Current
IDSS
VGS = 0 V
VDS = 72 V
TA = 125 °C
On-State Drain Currentb
ID(on)
VGS = 10 V
VDS = 10 V
VGS = 5 V
ID = 0.3 A
Drain-Source On-State Resistanceb
RDS(on)
VGS = 10 V
ID = 1 A
TA = 125 °Cd
Forward Transconductanceb
gfs
VDS = 7.5 V, ID = 0.475 A
Diode Forward Voltage
VSD
VGS = 0 V
IS = 0.86 A
Dynamic
Input Capacitance
Ciss
Output Capacitance
Reverse Transfer Capacitance
Coss
Crss
VGS = 0 V
VDS = 25 V, f = 1 MHz
Drain-Source Capacitance
Cds
Switchingc
Turn-On Time
Turn-Off Time
tON
VDD = 25 V, RL = 23
tOFF
ID 1 A, VGEN = 10 V, Rg = 23
Notes
a. FOR DESIGN AID ONLY, not subject to production testing.
b. Pulse test: PW 300 μs duty cycle 2 %.
c. Switching time is essentially independent of operating temperature.
d. This parameter not registered with JEDEC.
MIN.
90
0.8
-
0.3
-
-
-
-
-
-
-
-
170
0.7
-
-
-
-
-
-
LIMITS
TYP.b
MAX.
125
-
1.6
2
1.8
2.5
1.3
-
-
± 100
-
± 500
-
1
-
100
1.8
-
3.8
5.3
3.6
4
6.7
7.5
340
-
0.9
1.4
35
50
15
40
2
10
30
-
6
10
8
10
UNIT
V
nA
μA
mA
mS
V
pF
ns
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S11-1542-Rev. D, 01-Aug-11
2
Document Number: 70225
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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