2N6661 データシートの表示（PDF） - Vishay Semiconductors
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2N6661 Datasheet PDF : 6 Pages
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2N6661, 2N6661-2, 2N6661JANTX, 2N6661JANTXV
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
1.0
100
VGS = 10 V
6V
0.8
80
5V
VGS = 3 V
2.8 V
2.6 V
0.6
4V
60
2.4 V
0.4
3V
0.2
0
0
0.5
0.4
2V
1.0
2.0
3.0
4.0
5.0
VDS - Drain-to-Source Voltage (V)
Ohmic Region Characteristics
TJ = - 55 °C
125 °C
25 °C
VDS = 15 V
0.3
0.2
0.1
0
0
10
2
4
6
8
10
VGS - Gate-Source Voltage (V)
Transfer Characteristics
8
6
VGS = 10 V
4
2
0
0
0.5
1.0
1.5
2.0
2.5
ID - Drain Current (A)
On-Resistance vs. Drain Current
40
2.2 V
20
0
0
2.0 V
1.8 V
0.4
0.8
1.2
1.6
2.0
VDS - Drain-to-Source Voltage (V)
Output Characteristics for Low Gate Drive
7
6
5
4
3
ID = 0.1 A
0.5 A
2
1.0 A
1
0
0
4
8
12
16
20
VGS - Gate-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
2.25
2.00
VGS = 10 V
1.75
1.50
1.25
1.00
0.75
0.50
- 50 - 10
30
70
110
150
TJ - Junction Temperature (°C)
Normalized On-Resistance
vs. Junction Temperature
S11-1542-Rev. D, 01-Aug-11
3
Document Number: 70225
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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