2N7000 データシートの表示（PDF） - STMicroelectronics

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2N7000

N-channel 60 V, 1.8 Ω, 0.35 A, SOT23-3L, TO-92 STripFET™ Power MOSFET

STMicroelectronics 

Electrical characteristics

2

Electrical characteristics

2N7000, 2N7002

(TCASE = 25 °C unless otherwise specified)

Table 4.

Symbol

On/off states

Parameter

Test conditions

Min. Typ. Max. Unit

Drain-source

V(BR)DSS breakdown voltage

ID = 250 µA, VGS =0

60

V

Zero gate voltage

IDSS

drain current (VGS = 0)

t(s) IGSS

duc VGS(th)

Pro RDS(on)

Gate-body leakage

current (VDS = 0)

Gate threshold voltage

Static drain-source on

resistance

VDS = max rating

VDS = max rating,

TC = 125 °C

VGS = ± 18 V

VDS = VGS, ID = 250 µA

VGS = 10 V, ID = 0.5 A

VGS = 4.5 V, ID = 0.5 A

lete Table 5.

so Symbol

Dynamic

Parameter

Ob gfs (1)

t(s) - Ciss

c Coss

u Crss

rod td(on)

Ptr

tetd(off)

le tf

o Qg

s Qgs

Ob Qgd

Forward

transconductance

Input capacitance

Output capacitance

Reverse transfer

capacitance

Turn-on delay time

Rise time

Turn-off delay time

Fall time

Total gate charge

Gate-source charge

Gate-drain charge

Test conditions

VDS = 10 V , ID = 0.5 A

VDS = 25 V, f = 1 MHz,

VGS = 0

VDD = 30 V, ID = 0.5 A

RG = 4.7 Ω VGS = 4.5 V

(see Figure 16)

VDD = 30 V, ID = 1 A,

VGS = 5 V

(see Figure 17)

1

µA

10 µA

±100 nA

1

2.1

3

V

1.8

5

Ω

2

5.3 Ω

Min. Typ. Max. Unit

0.6

S

43

pF

20

pF

6

pF

5

ns

15

ns

7

ns

8

ns

1.4

2

nC

0.8

nC

0.5

nC

1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%.

4/14

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