2N7000 データシートの表示（PDF） - STMicroelectronics

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2N7000

N-channel 60 V, 1.8 Ω, 0.35 A, SOT23-3L, TO-92 STripFET™ Power MOSFET

STMicroelectronics 

2N7000, 2N7002

Electrical characteristics

Table 6.

Symbol

Source drain diode

Parameter

Test conditions

Min. Typ. Max. Unit

ISD

ISDM (1)

Source-drain current

Source-drain current

(pulsed)

0.35 A

1.40 A

VSD (2) Forward on voltage

ISD = 1 A, VGS = 0

1.2 V

trr

Reverse recovery time ISD = 1 A, di/dt = 100 A/µs,

32

ns

Qrr

Reverse recovery charge VDD = 20 V, Tj = 150 °C

25

nC

IRRM Reverse recovery current (see Figure 18)

1.6

A

1. Pulse width limited by safe operating area.

Obsolete Product(s) - Obsolete Product(s) 2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%

5/14

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