2PC4617Q データシートの表示（PDF） - NXP Semiconductors.

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2PC4617Q

NPN general purpose transistor

NXP Semiconductors. 

NXP Semiconductors

2PC4617

NPN general-purpose transistor

7. Characteristics

Table 6. Characteristics

Tamb = 25 °C; unless otherwise specified.

Symbol Parameter

Conditions

Min

Typ

Max Unit

ICBO

IEBO

collector-base

cut-off current

emitter-base

cut-off current

IE = 0 A; VCB = 30 V

IE = 0 A; VCB = 30 V;

Tj = 150 °C

IC = 0 A; VEB = 4 V

-

-

100

nA

-

-

5

μA

-

-

100

nA

hFE

DC current gain IC = 1 mA; VCE = 6 V

[1]

2PC4617Q

120

-

270

2PC4617R

180

-

390

2PC4617S

270

-

560

VCEsat collector-emitter IC = 50 mA; IB = 5 mA

[1] -

-

200

mV

saturation

voltage

Cc

collector

IE = ie = 0 A;

-

-

1.5

pF

capacitance

VCB = 12 V; f = 1 MHz

fT

transition

IC = 2 mA; VCE = 12 V;

[1] 100

-

-

MHz

frequency

f = 100 MHz

[1] Pulse test: tp ≤ 300 μs; δ ≤ 0.02.

2PC4617_5

Product data sheet

Rev. 05 — 17 November 2009

© NXP B.V. 2009. All rights reserved.

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