2SA1020 データシートの表示（PDF） - ON Semiconductor

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2SA1020

One Watt High Current PNP Transistor

ON Semiconductor 

2SA1020

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)

Characteristic

OFF CHARACTERISTICS

Collector −Emitter Breakdown Voltage (Note 1)

(IC = 10 mAdc, IB = 0)

Collector Cutoff Current

(VCB = 50 Vdc, IE = 0)

Emitter Cutoff Current

(VEB = 5.0 V, IC = 0)

ON CHARACTERISTICS (Note 2)

DC Current Gain

(IC = 500 mA, VCE = 2.0 V)

(IC = 1.5 A, VCE = 2.0 V)

Collector −Emitter Saturation Voltage

(IC = 1.0 A, IB = 50 mA)

Base −Emitter Saturation Voltage (IC = 1.0 A, IB = 50 mA)

SMALL− SIGNAL CHARACTERISTICS

Current −Gain − Bandwidth Product (Note 3)

(IC = 500 mAdc, VCE = 2.0 Vdc, f = 100 MHz)

1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle = 2.0%.

2. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle = 2.0%.

3. fT is defined as the frequency at which |hfe| extrapolates to unity.

Symbol

Min

Max

Unit

V(BR)CEO

50

ICBO

−

IEBO

−

Vdc

−

mAdc

1.0

1.0

mAdc

hFE

VCE(sat)

VBE(sat)

fT

70

240

40

−

−

0.5

−

1.2

100

−

−

Vdc

Vdc

MHz

ORDERING INFORMATION

Device

Package

Shipping†

2SA1020

2SA1020G

TO−92

TO−92

(Pb−Free)

5000 Units / Box

2SA1020RLRA

2SA1020RLRAG

TO−92

TO−92

(Pb−Free)

2000 / Tape & Reel

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging

Specifications Brochure, BRD8011/D.

http://onsemi.com

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