2SA1121 データシートの表示（PDF） - TY Semiconductor

部品番号

コンポーネント説明

メーカー

2SA1121

Silicon PNP Epitaxial

TY Semiconductor 

Product specification

2SA1121

Features

Low frequency amplifier

SOT-23

2.9+0.1

-0.1

0.4+0.1

-0.1

3

Unit: mm

1

2

0.95+0.1

-0.1

1.9+0.1

-0.1

Absolute Maximum Ratings Ta = 25

Parameter

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Collector current

Collector power dissipation

Junction temperature

Storage temperature

Symbol

Rating

Unit

VCBO

-35

V

VCEO

-35

V

VEBO

-4

V

IC

-500

mA

PC

150

mW

Tj

150

Tstg

-55 to +150

0.1+0.05

-0.01

1.Base

2.Emitter

3.collector

Electrical Characteristics Ta = 25

Parameter

Collector to base breakdown voltage

Collector to emitter breakdown voltage

Emitter to base breakdown voltage

Collector cutoff current

Collector to emitter saturation voltage

DC current transfer ratio

Base to emitter voltage

Symbol

Testconditons

V(BR)CBO IC = -10 mA, IE = 0

V(BR)CEO IC = -1 mA, RBE =

V(BR)EBO IE = -10 mA, IC = 0

ICBO VCB = -20 V, IE = 0

VCE(sat) IC = -150 mA, IB = -15 mA

hFE VCE = -3 V, IC = -10 mA

VBE VCE = -3 V, IC = -10 mA

hFE Classification

Marking

hFE

SB

60 120

SC

100 200

SD

160 320

Min Typ Max Unit

-35

V

-35

V

-4

V

-0.5 ìA

-0.2 -0.6 V

60

320

-0.64

V

http://www.twtysemi.com

sales@twtysemi.com

4008-318-123

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