2SA1567 データシートの表示（PDF） - Inchange Semiconductor
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2SA1567 Datasheet PDF : 2 Pages
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INCHANGE Semiconductor
isc Silicon PNP Power Transistor
isc Product Specification
2SA1567
ELECTRICAL CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= -25mA ; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= -6A; IB=B -0.3A
ICBO
Collector Cutoff Current
VCB= -50V ; IE= 0
IEBO
Emitter Cutoff Current
VEB= -6V; IC= 0
hFE
DC Current Gain
IC= -6A ; VCE= -1V
COB
Output Capacitance
fT
Current-Gain—Bandwidth Product
IE=0 ; VCB= -10V;ftest= 1.0MHz
IE= 0.5A ; VCE= -12V
Switching Times
ton
Turn-on Time
tstg
Storage Time
tf
Fall Time
IC= -6A ,RL= 4Ω,
IB1= -IB2= -0.12A,VCC= -24V
MIN TYP. MAX UNIT
-50
V
-0.35 V
-100 μA
-100 μA
50
330
pF
40
MHz
0.4
μs
0.4
μs
0.2
μs
isc Website：www.iscsemi.cn
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