2SA900 データシートの表示（PDF） - Quanzhou Jinmei Electronic

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2SA900

Silicon PNP Power Transistors

Quanzhou Jinmei Electronic 

JMnic

Silicon PNP Power Transistors

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CEO Collector-emitter breakdown voltage IC=-1mA;IB=0

V(BR)CBO Collector-base breakdown voltage IC=-10μA ;IE=0

V(BR)EBO Emitter-base breakdown voltage

IE=-10μA ;IC=0

VCEsat Collector-emitter saturation voltage IC=-1A ;IB=-50mA

VBEsat Base-emitter saturation voltage

IC=-500mA ;IB=-50mA

ICBO

Collector cut-off current

VCB=-10V; IE=0

ICEO

Collector cut-off current

VCE=-18V; IB=0

hFE-1

DC current gain

IC=-500mA ; VCE=-2V

hFE-2

DC current gain

IC=-1.5A ; VCE=-2V

COB

Output capacitance

IE=0 ; VCB=-6V;f=1MHz

fT

Transition frequency

IE=50mA ; VCB=-6V

‹ hFE-1 Classifications

Q

R

S

T

U

90-155 130-210 180-280 250-360 330-470

Product Specification

2SA900

MIN TYP. MAX UNIT

-18

V

-20

V

-5

V

-0.5

V

-1.2

V

-1

μA

-10 μA

90

470

50

40

pF

200

MHz

2

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