2SB1132 データシートの表示（PDF） - Willas Electronic Corp.

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2SB1132

SOT-89 Plastic-Encapsulate Transistors

Willas Electronic Corp. 

WILLAS

S1O.0TA-S8U9RFAPClEaMsOtiUcN-TESnCHcOaTpTKsYuBlAaRtReIETR rRaECnTsIFiIsERtoS -r2s0V- 200V

FM120-M+

2SB1132THRU

FM1200-M+

Typical ChaSrOaDc-1t2e3r+isPtiAcCsKAGE

Pb Free Product

-1000

Features

IC —— VCE

COMMON

1000

Package

o uhFE

t

——

lin

e

IC

•

Batch process

be-8t0t0er reverse

design,

leakage

excellent

current a

po

nd

wer diss

-5mA

thermal

iTpEM=a2ItT5i℃ToEnR offer

rea sistance.

s

• Low profile surface mounted applicatio-4n-.45mimnAAorder to

optimize board space.

• Lo-6w00 power loss, high efficiency.

-3.5mA

-3mA

• High current capability, low forward voltag-e2.5dmrAop.

100

SOD-123H

T =100℃

a

T =25℃ 0.146(3.7)

a

0.130(3.3)

0.012(0.3) Typ.

• Hi-g40h0 surge capability.

• Guardring for overvoltage protection.

-2mA

-1.5mA

• Ultra high-speed switching.

-1mA

•

-200

Silicon

epitaxial

planar

chip,

metal

silicon

junction.

• Lead-free parts meet environmental standardIB=s-0o.5fmA

MIL-0-STD-19500 /228

10

• RoHS-0 product f-o4 r packing-8code suff-1ix2 "G" -16

-20

-1

COLLECTOR-EMITTER VOLTAGE V (V)

Halogen free product for packing code sufCfEix "H"

0.071(1.8)

0.056(1.4)

COMMON EMITTER

V =-3V

CE

-10

-100

COLLECTOR CURRENT I (mA)

C

-1000

Mechanical data VCEsat —— IC

-400

• Epoxy : UL94-V0 rated flame retardant

-1000

VBEsat ——

IC

0.040(1.0)

0.024(0.6)

• Case : Molded plastic, SOD-123H

,

• Terminals :Plated terminals, solderable per MIL-STD-750

-100

Method 2026

• Polarity : Indicated by cathode band

• Mounting Position : Any

T =100 ℃

a

• Weight : Approximated 0.011 gram

T =25℃

a

0.031(0.8) Typ.

0.031(0.8) Typ.

T =25℃

a

-750

Dimensions in inches and (millimeters)

T =100 ℃

a

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25℃ ambient temperature unless otherwise specβi=f1ie0d.

β=10

Single phas-1e0-h1 alf wave, 60Hz,-10resistive of indu-1c0t0ive load.

-1000

-500

-1

-10

-100

-1000

For capacitive load, derate CcOuLrLreECnTtObRyC2U0R%RENT

I

C

(mA)

COLLECTOR CURRENT I (mA)

C

Marking Cod-1e000

RATINGS IC —— VBE

Maximum Recurrent Peak Reverse Voltage

Maximum RMS Voltage

Maximum DC Blocking Voltage

-100

Maximum Average Forward Rectified Current

SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FfMT 16—0-—MH FMIC180-MH FM1100-MH FM1150-MH FM1200-MH UN

12

13 300 14

15

16

18

10

115 120

VRRM

20

30

40

50

60

80

100

150

200 Vo

VRMS

14

21

28

35

42

56

70

105

140 Vo

VDC

20

30

40

100

50

60

80

100

150

200 Vo

IO

1.0

Am

Peak Forward Surge Current 8.3 ms single half sine-wave

superimposed on rated load (JEDEC method)

-10

Typical Thermal Resistance (Note 2)

IFSM

RΘJA

30

Am

40

℃/

Typical Junction Capacitance (Note 1)

Operating Temperature Range

CJ

COMMONTJEMITTER

-55 to +125

120

P

COMMON EMITTER

V-C5E=5-5Vto +150

℃

Storage Temp-e1 rature Range

V =-6V

CE TSTG

- 65 to +175

T =25℃

a

10

℃

-0

-300

-600

-900

-1200

-1

-10

-100

BASE-EMMITER VOLTAGE

CHARACTERISTICS

V (mV)

BE

COLLECTOR CURRENT I (mA)

C

SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH

UN

Maximum Forward Voltage at 1.0A DC

VF

0.50

0.70

0.85

0.9

0.92 Vo

Maximum

Average

100

Reverse

CuCrroebn/Ct iab t

—@—T A=2V5CB℃/VEB

IR

600

PC 0.—5 — Ta

mA

Rated DC Blocking Voltage

@T A=125℃

f=1MHz

10

NOTES:

I =0/I =0

C

E

C

T =25 ℃

500

ib

a

1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.

C

400

2- Thermal Resistance From Junction to Aobmbient

10

300

200

2012-061

-0.1

2012-0

-1

REVERSE VOLTAGE V (V)

-10

-20

100

0

0

25

50

W75 ILLA100S EL12E5 CTR150ONIC CORP.

AMBIENT TEMPERATURE T (℃)

a

WILLAS ELECTRONIC CORP.

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