2SB1302 データシートの表示（PDF） - TY Semiconductor

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2SB1302

PNP Epitaxial Planar Silicon Transistors

TY Semiconductor 

Electrical Characteristics Ta = 25

Parameter

Collector cutoff current

Emitter cutoff current

DC current Gain

Gain bandwidth product

Output capacitance

Collector-emitter saturation voltage

Base-emitter saturation voltage

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Turn-on time

Storage time

Fall time

Symbol

Testconditons

ICBO VCB = -20V , IE = 0

IEBO VEB = -4V , IE = 0

hFE VCE = -2V , IC = -500mA

fT VCE = -5V , IC = -200mA

Cob VCB = -10V , f = 1MHz

VCE(sat) IC = -3A , IB = -60mA

VBE(sat) IC = -3A , IB = -60mA

V(BR)CBO IC = -10ìA , IE = 0

V(BR)CEO IC = -1mA , RBE =

V(BR)EBO IE = -10ìA , IC = 0

ton

tstg

tf

hFE Classification

Marking

Rank

hFE

R

100 200

BJ

S

140 280

T

200 400

Product specification

2SB1302

Min Typ Max Unit

-500 nA

-500 nA

100

400

320

MHz

60

pF

-250 -500 V

-1 -1.3 V

-25

V

-20

V

-5

40

ns

200

ns

10

ns

http://www.twtysemi.com

sales@twtysemi.com

4008-318-123

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