2SC1226A データシートの表示（PDF） - Inchange Semiconductor
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2SC1226A Datasheet PDF : 5 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2SC1226 2SC1226A
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEsat Collector-emitter saturation voltage IC=2A ;IB=0.2 A
VBEsat Base-emitter saturation voltage
IC=2A ;IB=0.2 A
V(BR)CBO
Collector-base
breakdown voltage
2SC1226
2SC1226A
IC=1mA;IE=0
V(BR)CEO
Collector-emitter
breakdown voltage
2SC1226
2SC1226A
IC=10mA; IB=0
ICBO
Collector cut-off current
VCB=20V; IE=0
ICEO
Collector cut-off current
VCE=12V; IB=0
IEBO
Emitter cut-off current
VEB=5V; IC=0
hFE
DC current gain
IC=1A ; VCE=5V
COB
Output capacitance
IE=0; VCB=5V;f=1MHz
fT
Transition frequency
IE=0.5A ; VCB=5V
hFE classifications
P
Q
R
50-100 80-160 100-220
MIN TYP. MAX UNIT
0.4
1.0
V
1.5
V
40
V
50
32
V
40
1
μA
100 μA
100 μA
50
220
50
pF
150
MHz
2
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