2SC1514 データシートの表示（PDF） - Inchange Semiconductor
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2SC1514 Datasheet PDF : 2 Pages
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SC1514
DESCRIPTION
·High Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 300V(Min)
·Good Linearity of hFE
·Low Saturation Voltage
APPLICATIONS
·Designed for use in high frequency high voltage amplifier
and TV viedo output applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
300
V
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
IC
Collector Current-Continuous
Collector Power Dissipation
@ TC=25℃
PC
Collector Power Dissipation
@ Ta=25℃
TJ
Junction Temperature
Tstg
Storage Temperature Range
300
V
5
V
0.1
A
10
W
1.25
150
℃
-40~150
℃
isc Website：www.iscsemi.cn
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