2SC1623 データシートの表示（PDF） - Galaxy Semi-Conductor
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2SC1623 Datasheet PDF : 4 Pages
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BL Galaxy Electrical
Production specification
Silicon Epitaxial Planar Transistor
2SC1623
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Parameter
Symbol Test conditions
MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC=100μA,IE=0
Collector-emitter breakdown voltage V(BR)CEO IC=1mA,IB=0
Emitter-base breakdown voltage
V(BR)EBO IE=100μA,IC=0
Collector cut-off current
ICBO
VCB=60V,IE=0
Emitter cut-off current
IEBO
DC current gain
hFE
Collector-emitter saturation voltage VCE(sat)
VEB=5V,IC=0
VCE=6V,IC=1mA
IC=100mA, IB=10mA
60
V
50
V
5
V
0.1 μA
0.1 μA
90 200 600
0.15 0.3 V
Base-emitter saturation voltage
VBE(sat)
Transition frequency
fT
Output capacitance
Cob
CLASSIFICATION OF hFE(1)
Rank
L4
Range
90-180
Marking
L4
IC=100mA, IB=10mA
VCE=6V, IE= 10mA
VCB=6V, IE= 0,f=1.0MHz
L5
135-270
L5
L6
200-400
L6
0.86 1.0 V
250
MHz
3.0
MHz
L7
300-600
L7
Document number: BL/SSSTC0018
Rev.A
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