2SC2122 データシートの表示（PDF） - Inchange Semiconductor
部品番号
コンポーネント説明
メーカー
2SC2122 Datasheet PDF : 3 Pages
| |||
Inchange Semiconductor
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=50mA; IB=0;
V(BR)EBO Emitter-base breakdown voltage
IE=1mA; IC=0;
VCEsat Collector-emitter saturation voltage IC=8A;IB=2.5 A
VBEsat Base-emitter saturation voltage
IC=8A;IB=2.5 A
ICBO
Collector cut-off current
VCB=800V;IE=0
IEBO
Emitter cut-off current
VEB=7V;IC=0
hFE
DC current gain
IC=2.5A ; VCE=10V
fT
Transition frequency
IC=0.1A ; VCE=10V
Product Specification
2SC2122
MIN TYP. MAX UNIT
325
V
7
V
3.3
V
2.2
V
1.0
mA
1.0
mA
15
6
MHz
2
Share Link: 