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C3296 データシートの表示(PDF) - Quanzhou Jinmei Electronic
部品番号
コンポーネント説明
メーカー
C3296
Silicon NPN Power Transistors
Quanzhou Jinmei Electronic
C3296 Datasheet PDF : 4 Pages
1
2
3
4
JMnic
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
℃
unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V
(BR)CEO
Collector-emitter breakdown voltage I
C
=10mA , I
B
=0
V
CEsat
Collector-emitter saturation voltage I
C
=0.5A ;I
B
=50mA
V
BE
Base-emitter on voltage
I
C
=0.5A ; V
CE
=10V
I
CBO
Collector cut-off current
V
CB
=120V; I
E
=0
I
EBO
Emitter cut-off current
V
EB
=5V; I
C
=0
h
FE
DC current gain
I
C
=0.5A ; V
CE
=10V
C
OB
Output capacitance
I
E
=0 ; V
CB
=10V;f=1MHz
f
T
Transition frequency
I
C
=0.5A ; V
CE
=10V
Product Specification
2SC3296
MIN TYP. MAX UNIT
150
V
1.5
V
0.85
V
10
μ
A
10
μ
A
40
140
35
pF
4
MHz
2
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