2SD1193 データシートの表示（PDF） - Quanzhou Jinmei Electronic
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2SD1193 Datasheet PDF : 3 Pages
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Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO
Collector-emitter breakdown voltage IC=50mA ;RBE=∞
VCBO
Collector-base breakdown voltage
IC=5mA ;IE=0
VCEsat Collector-emitter saturation voltage IC=7A ;IB=14mA
VBEsat Base-emitter saturation voltage
IC=7A ;IB=14mA
ICBO
Collector cut-off current
VCB=40V; IE=0
IEBO
Emitter cut-off current
VEB=5V; IC=0
hFE
DC current gain
IC=7A ; VCE=2V
fT
Transition frequency
IC=7A ; VCE=5V
www.jmnic.com
2SD1193
MIN
70
60
2000
TYP.
20
MAX
1.5
2.0
0.1
3
UNIT
V
V
V
V
mA
mA
MHz
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