2SD2061 データシートの表示（PDF） - Jiangsu Changjiang Electronics Technology Co., Ltd

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2SD2061

TO-220F Plastic-Encapsulate NPN Transistors

Jiangsu Changjiang Electronics Technology Co., Ltd 

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD

TO-220F Plastic-Encapsulate Transistors

2SD2061 TRANSISTOR (NPN)

FEATURES

z Low saturation voltage

z Excellent DC current gain characteristice

TO-220F

1. BASE

2. COLLECTOR

3. EMITTER

MAXIMUM RATINGS (TA=25℃ unless otherwise noted)

Symbol

VCBO

VCEO

VEBO

IC

PC

Tj

Tstg

Paramenter

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current -Continuous

Collector Power Dissipation

Junction Temperature

Storage Temperature Range

Value

80

60

5

3

2

150

-55-150

Units

V

V

V

A

W

℃

℃

ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)

Parameter

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

Emitter cut-off current

DC current gain

Collector-emitter saturation voltage

Base-emitter saturation voltage

Transition frequency

Collector output capacitance

Symbol

Test conditions

V(BR)CBO IC=50µA, IE=0

V(BR)CEO IC=1mA, IB=0

V(BR)EBO IE=50µA, IC=0

ICBO

VCB=60V, IE=0

IEBO

VEB=4V, IC=0

hFE

VCE=5V, IC=0.5A

VCE(sat) IC=2A, IB=0.2A

VBE(sat) IC=2A, IB=0.2A

fT

VCE=5V, IC=0.5A, f=5MHz

Cob

VCB=10V, IE=0, f=1MHz

MIN TYP MAX UNIT

80

V

60

V

5

V

10

µA

10

µA

100

320

1

V

1.5

V

8

MHz

70

pF

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