2SD2015 データシートの表示（PDF） - Quanzhou Jinmei Electronic
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2SD2015 Datasheet PDF : 3 Pages
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Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO
VCEsat
VBEsat
Collector-emitter breakdown voltage IC=10mA ;IB=0
Collector-emitter saturation voltage IC=2A ;IB=2mA
Base-emitter saturation voltage
IC=2A ;IB=2mA
ICBO
Collector cut-off current
VCB=150V; IE=0
IEBO
Emitter cut-off current
VEB=6V; IC=0
hFE
DC current gain
fT
Transition frequency
COB
Collector output capacitance
Switching times
IC=2A ; VCE=2V
IC=0.1A ; VCE=12V
f=1MHz;VCB=10V
ton
Turn-on time
ts
Storage time
tf
Fall time
IC=2.0A IB1=-IB2=10mA
VCC=40V ,RL=20Ω
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2SD2015
MIN
120
2000
TYP.
40
40
MAX
1.5
2.0
10
10
UNIT
V
V
V
μA
mA
MHz
pF
0.6
μs
5.0
μs
2.0
μs
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