2SD2150 データシートの表示（PDF） - Weitron Technology
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2SD2150 Datasheet PDF : 4 Pages
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NPN Epitaxial Planar Transistors
P b Lead(Pb)-Free
ABSOLUTE MAXIMUM RATINGS (TA=25˚C)
Rating
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
Symbol
VCBO
VCEO
VEBO
IC
PD
Tj
Tstg
2SD2150
SOT-89
1
2
1. BASE
3
2. COLLECTOR
3. EMITTER
Limits
40
20
6
3
500
150
-55 to +150
Unit
V
V
V
A
mW
˚C
˚C
ELECTRICAL CHARACTERISTICS(TA=25˚Cunless otherwise noted)
Parameter
Collector-Base Breakdown Voltage
IC=50µA, IE=0
Collector-Emitter Breakdown Voltage
IC=1mA, IB=0
Emitter-Base Breakdown Voltage
IE=50µA, IC=0
Collector Cutoff Current
VCB=30V, IE=0
Emitter Cutoff Current
VEB=5V, IE=0
Symbol
Min
Typ
Max
Unit
BVCBO
40
-
-
V
BVCEO
20
-
-
V
BVEBO
6
-
-
V
ICBO
-
-
0.1
µA
IEBO
-
-
0.1
µA
WEITRON
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http://www.weitron.com.tw
15-Aug-05
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