D2318 データシートの表示（PDF） - TY Semiconductor

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D2318

High-current gain Power Transistor

TY Semiconductor 

SMD Type

TransistIoCrs

Product specification

2SD2318

Features

High DC current gain.

Low saturation voltage.

TO-252

6.50+0.15

-0.15

5.30+0.2

-0.2

2.30+0.1

-0.1

0.50+0.8

-0.7

Unit: mm

0.80+0.1

-0.1

0.127

max

Absolute Maximum Ratings Ta = 25

Parameter

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Collector current (pulse) *

Collector power dissipation

Junction temperature

Storage temperature

* Pw=100ms.

Tc = 25

Electrical Characteristics Ta = 25

Parameter

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cutoff current

Emitter cutoff current

Collector-emitter saturation voltage

Base-emitter saturation voltage

DC current transfer ratio

Output capacitance

Transition frequency

hFE Classification

Rank

hFE

U

560 1200

V

820 1800

2.3

4.60+0.15

-0.15

0.60+0.1

-0.1

Symbol

VCBO

VCEO

VEBO

IC

ICP

PC

Tj

Tstg

Rating

80

60

6

3

4.5

4.5

1

15

150

-55 to +150

Unit

V

V

V

A

A(Pulse)*

A

W

W

1 Base

2 Collector

3 Emitter

Symbol

Testconditons

BVCBO IC=50ìA

BVCEO IC=1mA

BVEBO IE=50ìA

ICBO VCB=80V

IEBO VEB=6V

VCE(sat) IC=2 A, IB=0.05A

VBE(sat) IC=2 A, IB=0.05A

hFE VCE=4V, IC=0.5A

fT VCE=5V, IE= -0.2A, f=10MHz

Cob VCB=10V, IE=0A, f=1MHz

Min Typ Max Unit

80

V

60

V

6

V

100 ìA

100 ìA

1.0 V

1.5 V

560

1800

50

MHz

60

pF

http://www.twtysemi.com

sales@twtysemi.com

4008-318-123

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