2SD313(2005) データシートの表示（PDF） - Unisonic Technologies
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| 2SD313 Datasheet PDF : 0 Pages | |||
2SD313
NPN SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
VCBO
60
V
Collector-Emitter Voltage
VCEO
60
V
Emitter-Base Voltage
VEBO
5
V
Collector Current
Junction Temperature
IC
3
A
TJ
+150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS(Ta=25°C)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
Collector-Base Breakdown Voltage
BVCBO IC=1mA
60
Collector-Emitter Breakdown Voltage BVCEO IC=10mA
60
Emitter-Base Breakdown Voltage
BVEBO IE=100uA
5
Collector Cut-Off Current
ICBO
VCB=20V, IE=0
Emitter Cut-Off Current
IEBO
VEB=4V, IC=0
Collector-Emitter Saturation Voltage
VCE(SAT) IC=2A, IB=0.2A
Base-Emitter On voltage
VBE(ON) VCE=2V, IC=1A
DC Current Gain
hFE
IC=1A, VCE=2V
IC=0.1A,VCE=2V
40
40
CLASSIFICATION ON hFE
RANK
RANGE
C
40-80
D
60-120
E
100-200
TYP MAX UNIT
V
V
V
0.1
mA
1.0
mA
1.0
V
1.5
V
320
F
160-320
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R203-001,B
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