INCHANGE Semiconductor
isc Silicon NPN Darlingtion Power Transistor
isc Product Specification
2SD803
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA ; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB=B 30mA
ICBO
Collector Cutoff current
VCB= 120V; IE=0
IEBO
Emitter Cut-off current
VEB= 6V; IC= 0
hFE-1
DC Current Gain
IC= 1A ; VCE= 4V
hFE-2
DC Current Gain
IC= 40A ; VCE= 4V
MIN MAX UNIT
100
V
1.5
V
100
μA
10
mA
2000
7
isc Website:www.iscsemi.cn
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