2SD974 データシートの表示（PDF） - Renesas Electronics

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2SD974

Silicon NPN Epitaxial Transistor

Renesas Electronics 

2SD974

Electrical Characteristics

(Ta = 25°C)

Item

Symbol Min Typ Max Unit

Test conditions

Collector to base breakdown voltage

V(BR)CBO

120

—

—

Collector to emitter breakdown voltage V(BR)CEO

60

—

—

Emitter to base breakdown voltage

V(BR)EBO

5

—

—

Collector cutoff current

ICBO

—

—

1.0

DC current transfer ratio

hFE

150

—

—

Collector to emitter saturation voltage

VCE(sat)

—

—

0.3

Base to emitter saturation voltage

VBE(sat)

—

—

1.2

Fall time

tf

—

0.4

—

Note: 1. Pulse test

V IC = 10 µA, IE = 0

V IC = 1 mA, RBE = ∞

V IE = 10 µA, IC = 0

µA VCB = 100 V, IE = 0

VCE = 5 V, IC = 1 A*1

V IC = 1 A, IB = 0.05 A*1

V

pF ICP = 1 A, IB1 = –IB2 = 50 mA*1

Rev.3.00 Oct 06, 2006 page 2 of 5

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