2SJ409 データシートの表示（PDF） - Hitachi -> Renesas Electronics

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2SJ409

Silicon P-Channel MOS FET

Hitachi -> Renesas Electronics 

2SJ409(L), 2SJ409(S)

Electrical Characteristics (Ta = 25°C)

Item

Symbol Min

Drain to source breakdown

voltage

V(BR)DSS

–100

Gate to source breakdown

voltage

V(BR)GSS

±20

Gate to source leak current IGSS

Zero gate voltage drain current IDSS

Gate to source cutoff voltage VGS(off)

Static drain to source on state RDS(on)

resistance

—

—

–1.0

—

—

Typ

—

—

—

—

—

0.12

0.16

Max Unit

—

V

—

V

±10 µA

–250 µA

–2.0 V

0.16 Ω

0.22 Ω

Forward transfer admittance |yfs|

7.5 12

—

S

Input capacitance

Ciss

—

1860 —

pF

Output capacitance

Coss —

680 —

pF

Reverse transfer capacitance Crss

—

145 —

pF

Turn-on delay time

t d(on)

Rise time

tr

Turn-off delay time

t d(off)

Fall time

tf

Body to drain diode forward VDF

voltage

—

15

—

ns

—

115 —

ns

—

320 —

ns

—

170 —

ns

—

–1.05 —

V

Body to drain diode reverse trr

recovery time

—

280 —

ns

Test conditions

ID = –10 mA, VGS = 0

IG = ±100 µA, VDS = 0

VGS = ±16 V, VDS = 0

VDS = –80 V, VGS = 0

ID = –1 mA, VDS = –10 V

ID = –10 A

VGS = –10 V*1

ID = –10 A

VGS = –4 V*1

ID = –10 A

VDS = –10 V*1

VDS = –10 V

VGS = 0

f = 1 MHz

ID = –10 A

VGS = –10 V

RL = 3 Ω

IF = –20 A, VGS = 0

IF = –20 A, VGS = 0,

diF/dt = 50 A/µs

See characteristics curves of 2SJ221

3

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