2SK3000 データシートの表示（PDF） - Renesas Electronics
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2SK3000 Datasheet PDF : 7 Pages
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2SK3000
Silicon N Channel MOS FET
Low Frequency Power Switching
Features
• Low on-resistance
RDS(on) = 0.16 Ω typ. (VGS = 10 V, ID = 450 mA)
• 4 V gate drive devices.
• Small package (MPAK)
• Expansive drain to source surge power capability
Outline
MPAK
D
3
3
2
G
1
S
Note: Marking is “ZY–”.
REJ03G0379-0300Z
(Previous ADE-208-585A (Z))
Rev.3.00
Jun.15.2004
1
2
1. Source
2. Gate
3. Drain
Absolute Maximum Ratings
Item
Symbol
Drain to source voltage
VDSS
Gate to source voltage
VGSS
Drain current
Drain peak current
ID
ID(pulse)Note1
Reverse drain current
Channel dissipation
IDR
Pch Note2
Channel temperature
Tch
Storage temperature
Tstg
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1 %
2. When using the glass epoxy board (10 mm x 10 mm x 1 mmt )
Ratings
40
±10
1.0
4.0
1.0
400
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
mW
°C
°C
Rev.3.00, Jun.16.2004, page 1 of 6
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