K435D データシートの表示（PDF） - Renesas Electronics
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K435D Datasheet PDF : 6 Pages
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2SK435
Absolute Maximum Ratings
Item
Drain to source voltage
Gate to source voltage
Drain current
Gate current
Channel power dissipation
Channel temperature
Storage temperature
Symbol
VDS
VGSO
ID
IG
Pch
Tch
Tstg
Ratings
22
–22
100
10
300
150
–55 to +150
(Ta = 25°C)
Unit
V
V
mA
mA
mW
°C
°C
Electrical Characteristics
Item
Gate to source breakdown voltage
Gate cutoff current
Gate to source cutoff voltage
Drain current
Forward transfer admittance
Symbol
V(BR)GSS
IGSS
VGS(off)
IDSS*1
|yfs|
Min
–22
—
—
12
20
Typ
—
—
—
—
—
Input capacitance
Ciss
—
9.0
Reverse transfer capacitance
Crss
—
2.8
Noise figure
NF
—
0.5
Note: 1. The 2SK435 is grouped by IDSS as follows.
Grade
IDSS
C
12 to 22
D
18 to 30
Max
—
–10
–2.5
30
—
11.0
4.0
3.0
Unit
V
nA
V
mA
mS
pF
pF
dB
(Ta = 25°C)
Test conditions
IG = –10 µA, VDS = 0
VGS = –15 V, VDS = 0
VDS = 5 V, ID = 10 µA
VDS = 5 V, VGS = 0, Pulse test
VDS = 5 V, ID = 10 mA,
f = 1kHz
VDS = 5 V, VGS = 0,
f = 1MHz
VDS = 5 V, VGS = 0,
f = 1MHz
VDS = 5 V, ID = 1 mA,
f = 1kHz, Rg = 1kΩ
Rev.2.00 Aug 10, 2005 page 2 of 5
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