USBUF01W6 データシートの表示（PDF） - STMicroelectronics

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USBUF01W6

EMI FILTER AND LINE TERMINATION FOR USB UPSTREAM PORTS

STMicroelectronics 

USBUFxxW6

Fig. A7: Remaining voltage at both stages S1 (Vinput) and S2 (Voutput) during ESD surge.

Vin

Vin

Vout

Vout

a. Positive surge

b.Negative surge

Please note that the USBUFxxW6 is not only acting for positive ESD surges but also for negative ones. For

these kinds of disturbances it clamps close to ground voltage as shown in Fig. A7b.

LATCH-UP PHENOMENA

The early ageing and destruction of IC’s is often due to latch-up phenomenon which is mainly induced by

dV/dt. Thanks to its structure, the USBUFxxW6 provides a high immunity to latch-up phenomenon by

smoothing very fast edges.

CROSSTALK BEHAVIOR

Fig. A8: Crosstalk phenomenon

RG1

Line 1

VG1

RG2

Line 2

RL1

α1 VG1 + β12 VG2

VG2

RL2

α2 VG2 + β21 VG1

DRIVERS

RECEIVERS

The crosstalk phenomenon is due to the coupling between 2 lines. The coupling factor ( β12 or β21 ) in-

creases when the gap across lines decreases, particularly in silicon dice. In the example above the ex-

pected signal on load RL2 is α2VG2, in fact the real voltage at this point has got an extra value β21VG1. This

part of the VG1 signal represents the effect of the crosstalk phenomenon of the line 1 on the line 2. This

phenomenon has to be taken into account when the drivers impose fast digital data or high frequency ana-

log signals in the disturbing line. The perturbed line will be more affected if it works with low voltage signal

or high load impedance (few kΩ).

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