HMBT6427 データシートの表示（PDF） - Hi-Sincerity Microelectronics

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HMBT6427

NPN EPITAXIAL PLANAR TRANSISTOR

Hi-Sincerity Microelectronics 

HI-SINCERITY

MICROELECTRONICS CORP.

Characteristics Curve

Spec. No. : HE6846

Issued Date : 1995.07.21

Revised Date : 2002.10.25

Page No. : 2/3

100000

Current Gain & Collector Current

Saturation Voltage & Collector Current

10

VCE=5V

10000

0.1

1

10

100

Collector Current (mA)

1000

On Voltage & Collector Current

10

VBE(sat) @ IC=1000IB

1

VCE(sat) @ IC=1000IB

VCE(sat) @ IC=100IB

0.1

0.1

1

10

100

Collector Current (mA)

1000

Capacitance & Reverse-Biased Voltage

10

1

VBE(ON) @ VCE=5V

1

Cob

0.1

0.01

0.1

1

10

100

Collector Current (mA)

1000

10000

PT=1ms

Safe Operating Area

1000

100

PT=100ms

PT=1s

10

1

1

HMBT6427

10

100

Forward Voltage (V)

0.1

0.1

1

10

100

Reverese-Biased Voltage (V)

HSMC Product Specification

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