HSC5094 データシートの表示（PDF） - Hi-Sincerity Microelectronics

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HSC5094

NPN SILICON BIPOLAR TRANSISTOR

Hi-Sincerity Microelectronics 

HI-SINCERITY

MICROELECTRONICS CORP.

Spec. No. : HN200103

Issued Date : 1999.08.01

Revised Date : 2002.10.25

Page No. : 1/7

HSC5094

NPN SILICON BIPOLAR TRANSISTOR

Description

The HSC5094 is a NPN Silicon Transistor designed for low noise

amplifier at VHF, UHF and CATV band.

Features

SOT-23

• Low Noise and High Gain: NF=1.4dB, Ga=12dB @ VCE=2V, Ic=4.2mA, f=0.9GHz

• High Power Gain: MAG=13.5dB @ VCE =5V, Ic =4.5mA, f=0.9GHz

Applications

• Low noise and high gain amplifiers

• Oscillator buffer amplifiers

Electrical Characteristics

• Maximum Ratings (Ta=25°C)

Parameters

Symbol

Min. Typ. Max. Unit

Collector-Emitter Breakdown Voltage

VCEO

-

10

-

V

Collector-Base Breakdown Voltage

VCBO

-

18

-

V

Emitter-Base Breakdown Voltage

VEBO @ IE=100uA

-

2.5

-

V

Collector Current

IC

-

*20

-

mA

Collector Power Dissipation

PC

-

150

-

mW

Junction Temperature

Tj

-

125

-

°C

Storage Temperature

Tstg

-50

-

125 °C

* Note: Here we define the point where the DC current gain drops off.

• Characterization Information (Ta=25°C)

Parameters

Collector Cutoff Current

Emitter Cutoff Current

DC Current Gain

Cutoff Frequency

Minimum Noise Figure

Associated Gain

Insertion Gain |S21|2

in 50 Ohm system

Conditions

Symbol Min Typ. Max Unit

VCB =3V

VEB =1V

VCE =2V, IC =1mA

VCE =1V, IC =10mA

VCE =3V, IC =12mA

VCE =2V, IC =4.2mA, f =0.9GHz

VCE =5V, IC =4.5mA, f =0.9GHz

VCE =2V, IC =4.2mA, f =0.9GHz

VCE =5V, IC =4.5mA, f =0.9GHz

VCE =2V, IC =4.2mA, f =0.9GHz

VCE =5V, IC =4.5mA, f =0.9GHz

ICBO

IEBO

hFE

fT

NFmin

GA

|S21|2

- - 1 uA

- - 1 uA

50 80 200

- 7.6 - GHz

- 9 - GHz

- 1.4 - dB

- 1.6 - dB

- 12 - dB

- 13.5 - dB

- 12.8 - dB

- 13.5 - dB

HSC5094

HSMC Product Specification

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