HMPSA55 データシートの表示（PDF） - Hi-Sincerity Microelectronics
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HMPSA55 Datasheet PDF : 4 Pages
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HI-SINCERITY
MICROELECTRONICS CORP.
HMPSA55
PNP SILICON TRANSISTOR
Description
The HMPSA55 is designed for using in a amplifier applications.
Spec. No. : HE6310-B
Issued Date : 1992.09.09
Revised Date : 2000.10.01
Page No. : 1/4
Absolute Maximum Ratings
• Maximum Temperatures
Storage Temperature ............................................................................................ -55 ~ +150 °C
Junction Temperature ................................................................................... +150 °C Maximum
• Maximum Power Dissipation
Total Power Dissipation (Ta=25°C) ............................................................................... 625 mW
• Maximum Voltages and Currents (Ta=25°C)
VCBO Collector to Base Voltage ....................................................................................... -60 V
VCEO Collector to Emitter Voltage .................................................................................... -60 V
VEBO Emitter to Base Voltage ............................................................................................ -4 V
IC Collector Current ..................................................................................................... -500 mA
Characteristics (Ta=25°C)
Symbol
Min.
Typ.
BVCBO
-60
-
BVCEO
-60
-
BVEBO
-4
-
ICBO
-
-
ICEO
-
-
*VCE(sat)
-
-
VBE(on)
-
-
*hFE1
50
-
*hFE2
50
-
fT
50
-
Max.
-
-
-
-100
-100
-0.25
-1.2
-
-
-
Unit
Test Conditions
V
V
V
nA
nA
V
V
MHz
IC=-100uA, IE=0
IC=-1mA, IB=0
IE=-100uA, IC=0
VCB=-60V, IE=0
VCE=-60V, IB=0
IC=-100mA, IB=-10mA
IC=-100mA, VCE=-1V
IC=-10mA, VCE=-1V
IC=-100mA, VCE=-1V
IC=-100mA, VCE=-1V, f=1MHz
*Pulse Test : Pulse Width ≤380us, Duty Cycle≤2%
HSMC Product Specification
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