HMBTA56 データシートの表示（PDF） - Hi-Sincerity Microelectronics
部品番号
コンポーネント説明
メーカー
HMBTA56 Datasheet PDF : 3 Pages
| |||
HI-SINCERITY
MICROELECTRONICS CORP.
HMBTA56
PNP SILICON TRANSISTOR
Description
Amplifier Transistor
Spec. No. : HE6856
Issued Date : 1994.07.29
Revised Date : 2002.10.25
Page No. : 1/3
Absolute Maximum Ratings
SOT-23
• Maximum Temperatures
Storage Temperature ........................................................................................... -55 ~ +150 °C
Junction Temperature.................................................................................... +150 °C Maximum
• Maximum Power Dissipation
Total Power Dissipation (Ta=25°C) ............................................................................... 225 mW
• Maximum Voltages and Currents (Ta=25°C)
VCBO Collector to Base Voltage ........................................................................................ -80 V
VCEO Collector to Emitter Voltage..................................................................................... -80 V
VEBO Emitter to Base Voltage............................................................................................. -4 V
IC Collector Current ...................................................................................................... -500 mA
Characteristics (Ta=25°C)
Symbol
Min.
Typ.
BVCBO
-80
-
BVCEO
-80
-
BVEBO
-4
-
ICBO
-
-
ICEO
-
-
*VCE(sat)
-
-
VBE(on)
-
-
*hFE1
50
-
*hFE2
50
-
fT
100
-
Max.
-
-
-
-100
-100
-0.25
-1.2
-
-
-
Unit
Test Conditions
V
V
V
nA
nA
V
V
MHz
IC=-100uA
IC=-1mA
IE=-100uA
VCB=-80V
VCE=-60V
IC=-100mA, IB=-10mA
VCE=-1V, IC=-100mA
VCE=-1V, IC=-10mA
VCE=-1V, IC=-100mA
VCE=-2V, IC=-10mA, f=1MHz
*Pulse Test: Pulse Width ≤380us, Duty Cycle≤2%
HMBTA56
HSMC Product Specification
Share Link: 