HI6718 データシートの表示（PDF） - Hi-Sincerity Microelectronics
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HI6718 Datasheet PDF : 2 Pages
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HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE9008-A
Issued Date : 1998.04.10
Revised Date : 2000.11.01
Page No. : 1/2
HI6718
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The HI6718 is designed for general purpose medium power
amplifier and switching.
Features
• High power: 1.2W
• High current: 1A
Absolute Maximum Ratings (Ta=25°C)
• Maximum Temperatures
Storage Temperature ............................................................................................ -55 ~ +150 °C
Junction Temperature .................................................................................................... +150 °C
• Maximum Power Dissipation
Total Power Dissipation (Tc=25°C) .................................................................................... 20 W
• Maximum Voltages and Currents
BVCBO Collector to Base Voltage .................................................................................... 100 V
BVCEO Collector to Emitter Voltage................................................................................. 100 V
BVEBO Emitter to Base Voltage ........................................................................................... 5 V
IC Collector Current .............................................................................................................. 1 A
Characteristics (Ta=25°C)
Symbol
Min.
Typ.
BVCBO
100
-
BVCEO
100
-
BVEBO
5
-
ICBO
-
-
*VCE(sat)
-
-
*hFE1
80
-
*hFE2
50
-
*hFE3
20
-
fT
50
-
Cob
-
-
Max.
-
-
-
100
350
-
250
-
-
20
Unit
Test Conditions
V
V
V
nA
mV
MHz
pF
IC=100uA
IC=1mA
IC=10uA
VCB=80V
IC=350mA, IB=35mA
VCE=1V, IC=50mA
VCE=1V, IC=250mA
VCE=1V, IC=500mA
VCE=10V, IC=50mA, f=100MHz
VCB=10V, f=1MHz
*Pulse Test : Pulse Width ≤380us, Duty Cycle≤2%
HSMC Product Specification
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