ACE2301BM データシートの表示（PDF） - ACE Technology Co., LTD.

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ACE2301BM

P-Channel Enhancement Mode MOSFET

ACE Technology Co., LTD. 

ACE2301

P-Channel Enhancement Mode MOSFET

Description

The ACE2301 is the P-Channel logic enhancement mode power field effect transistor are produced

using high cell density, DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

These devices are particularly suited for low voltage application such as cellular phone and notebook

computer power management and Battery powered circuits, and low in-line power loss are needed in a

very small outline surface mount package.

Features

 VDS=-20V

 RDS(ON),Vgs@-4.5V,Ids@-2.8A=100mΩ

 RDS(ON),Vgs@-2.5V,Ids@-2.0A=150mΩ

 Advanced trench process technology

 High Density Cell Design For Ultra Low On-Resistance

Absolute Maximum Ratings

Parameter

Symbol Max Unit

Drain-Source Voltage

Gate-Source Voltage

VDS

-20

V

VGS

±12 V

Continuous Drain Current

Pulsed Drain Current1)

Maximum Power Dissipation

TA=25℃

TA=70℃

Operating Junction Temperature

Storage Temperature Range

Junction to Ambient Thermal Resistance (PCB mounted)2)

ID

IDM

PD

TJ

TSTG

RθJA

-2.2 A

-8

A

1.25

W

0.8

-55 to 150 OC

-55 to 150 OC

140 OC/W

Note: 1.Repetitive Rating: Pulse width limited by the maximum junction temperature.

2.1-in2 2oz Cu PCB board.

3.Guaranteed by design; not subject to production testing.

VER 1.3 1

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