APT100S20B(2006_5) データシートの表示（PDF） - Microsemi Corporation

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APT100S20B
(Rev.:2006_5)

HIGH VOLTAGE SCHOTTKY DIODE

Microsemi Corporation 

1

2

1 - Cathode

2 - Anode

Back of Case - Cathode

TO-247

1

2

APT100S20B 200V 120A

HIGH VOLTAGE SCHOTTKY DIODE

PRODUCT APPLICATIONS

• Parallel Diode

-Switchmode Power Supply

-Inverters

• Free Wheeling Diode

-Motor Controllers

-Converters

• Snubber Diode

• Uninterruptible Power Supply (UPS)

• 48 Volt Output Rectifiers

• High Speed Rectifiers

PRODUCT FEATURES

• Ultrafast Recovery Times

• Soft Recovery Characteristics

• Popular TO-247 Package or

Surface Mount D3PAK Package

• Low Forward Voltage

• High Blocking Voltage

• Low Leakage Current

PRODUCT BENEFITS

• Low Losses

• Low Noise Switching

• Cooler Operation

• Higher Reliability Systems

• Increased System Power

Density

MAXIMUM RATINGS

Symbol Characteristic / Test Conditions

All Ratings: TC = 25°C unless otherwise specified.

APT100S20B

UNIT

VR

VRRM

VRWM

IF(AV)

IF(RMS)

IFSM

TJ,TSTG

TL

EVAL

Maximum D.C. Reverse Voltage

Maximum Peak Repetitive Reverse Voltage

Maximum Working Peak Reverse Voltage

Maximum Average Forward Current 1 (TC = 125°C, Duty Cycle = 0.5)

RMS Forward Current (Square wave, 50% duty) 1

Non-Repetitive Forward Surge Current (TJ = 45°C, 8.3ms)

Operating and StorageTemperature Range

Lead Temperature for 10 Sec.

Avalanche Energy (2A, 50mH)

200

120

318

1000

-55 to 150

300

100

Volts

Amps

°C

mJ

STATIC ELECTRICAL CHARACTERISTICS

Symbol

VF

Forward Voltage

IRM Maximum Reverse Leakage Current

CT

Junction Capacitance, VR = 200V

IF = 100A

IF = 200A

IF = 100A, TJ = 125°C

VR = 200V

VR = 200V, TJ = 125°C

MIN TYP MAX UNIT

.89 .95

1.06

Volts

.76

2

mA

40

470

pF

Microsemi Website - http://www.microsemi.com

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