APT100S20B(2006_5) データシートの表示（PDF） - Microsemi Corporation
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APT100S20B Datasheet PDF : 4 Pages
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DYNAMIC CHARACTERISTICS
Symbol Characteristic
Test Conditions
MIN
trr
Qrr
IRRM
trr
Qrr
IRRM
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Maximum Reverse Recovery Current
Reverse Recovery Time
Reverse Recovery Charge
Maximum Reverse Recovery Current
Reverse Recovery Time
Reverse Recovery Charge
Maximum Reverse Recovery Current
-
IF = 100A, diF/dt = -200A/µs
VR = 133V, TC = 25°C
-
-
-
IF = 100A, diF/dt = -200A/µs
VR = 133V, TC = 125°C
-
-
-
IF = 100A, diF/dt = -700A/µs
VR = 133V, TC = 125°C
-
-
THERMAL AND MECHANICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions
MIN
RθJC Junction-to-Case Thermal Resistance
WT
Package Weight
Torque Maximum Mounting Torque
Microsemi reserves the right to change, without notice, the specifications and information contained herein.
1 Countinous current limited by package lead temperature.
APT100S20B
TYP
70
230
6
110
690
11
95
1750
32
MAX
-
-
UNIT
ns
nC
Amps
ns
nC
Amps
ns
nC
Amps
TYP
0.22
5.9
MAX
.18
10
1.1
UNIT
°C/W
oz
g
lb•in
N•m
0.20
0.18
D = 0.9
0.16
0.14
0.7
0.12
0.10
0.5
0.08
Note:
0.06
0.3
t1
0.04
0.1
0.02
0.05
SINGLE PULSE
t2
Duty Factor D = t1/t2
Peak TJ = PDM x ZθJC + TC
0
10-5
10-4
10-3
10-2
10-1
1.0
RECTANGULAR PULSE DURATION (seconds)
FIGURE 1a. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION
TJ ( C)
TC ( C)
Dissipated Power
(Watts)
0.00817
0.0174
0.0593
0.095
0.00514
0.00242
0.0158
0.384
ZEXT are the external thermal
impedances: Case to sink,
sink to ambient, etc. Set to
zero when modeling only
the case to junction.
FIGURE 1b, TRANSIENT THERMAL IMPEDANCE MODEL
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