APT6010JFLL データシートの表示（PDF） - Microsemi Corporation
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APT6010JFLL Datasheet PDF : 5 Pages
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190
100
OPERATION HERE
LIMITED BY RDS (ON)
100µS
10
1mS
TC =+25°C
TJ =+150°C
SINGLE PULSE
1
1
10
100
600
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
16
ID = 47A
VDS=120V
10mS
12
VDS=300V
VDS=480V
8
4
0
0
50
100 150 200 250
Qg, TOTAL GATE CHARGE (nC)
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
120
td(off)
100
80 VDD = 400V
RG = 5Ω
TJ = 125°C
60 L = 100µH
40
td(on)
20
0
10 20 30 40 50 60 70 80 90
ID (A)
FIGURE 14, DELAY TIMES vs CURRENT
2500
VDD = 400V
RG = 5Ω
2000
TJ = 125°C
L = 100µH
EON includes
Eoff
diode reverse recovery
1500
1000
Eon
500
0
10 20 30 40 50 60 70 80 90
ID (A)
FIGURE 16, SWITCHING ENERGY vs CURRENT
20,000
10,000
1,000
APT6010JFLL
Ciss
Coss
100
Crss
10
0
10
20
30
40
50
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 11, CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
200
100
TJ =+150°C
TJ =+25°C
10
1
0.3 0.5 0.7 0.9 1.1 1.3 1.5
VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE
140
120
100
VDD = 400V
RG = 5Ω
TJ = 125°C
L = 100µH
80
tf
60
tr
40
20
0
10 20 30 40 50 60 70 80 90
ID (A)
FIGURE 15, RISE AND FALL TIMES vs CURRENT
4000
3000
VDD = 400V
ID = 47A
TJ = 125°C
L = 100µH
EON includes
diode reverse recovery
Eoff
2000
Eon
1000
0
0 5 10 15 20 25 30 35 40 45 50
RG, GATE RESISTANCE (Ohms)
FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE
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