APT6017JFLL(2004) データシートの表示（PDF） - Advanced Power Technology
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APT6017JFLL Datasheet PDF : 5 Pages
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124
OPERATION HERE
LIMITED BY RDS (ON)
50
100µS
10
1mS
TC =+25°C
TJ =+150°C
SINGLE PULSE
1
1
10
100
600
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
16
ID = 31A
10mS
12
VDS= 120V
8
VDS= 300V
VDS= 480V
4
0
0 20 40 60 80 100 120 140 160
Qg, TOTAL GATE CHARGE (nC)
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
80
td(off)
70
60
VDD = 400V
50 RG = 5Ω
TJ = 125°C
40 L = 100µH
30
20
td(on)
10
0
0 10 20 30 40 50 60
ID (A)
FIGURE 14, DELAY TIMES vs CURRENT
1400
1200
1000
VDD = 400V
RG = 5Ω
TJ = 125°C
L = 100µH
EON includes
diode reverse recovery
800
Eoff
600
Eon
400
200
0
0 10 20 30 40 50 60
ID (A)
FIGURE 16, SWITCHING ENERGY vs CURRENT
20,000
10,000
1,000
APT6017JFLL
Ciss
Coss
100
Crss
10
0
10
20
30
40
50
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 11, CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
200
100
TJ =+150°C
TJ =+25°C
10
1
0.3 0.5 0.7 0.9 1.1 1.3 1.5
VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE
80
VDD = 400V
70 RG = 5Ω
TJ = 125°C
60 L = 100µH
50
tf
40
30
tr
20
10
0
0 10 20 30 40 50 60
ID (A)
FIGURE 15, RISE AND FALL TIMES vs CURRENT
1800
VDD = 400V
1600 ID = 31A
1400 TJ = 125°C
Eoff
L = 100µH
1200
EON includes
diode reverse recovery
1000
800
Eon
600
400
200
0
0 5 10 15 20 25 30 35 40 45 50
RG, GATE RESISTANCE (Ohms)
FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE
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