AS4C1M16E5 データシートの表示（PDF） - Alliance Semiconductor

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AS4C1M16E5

5V 1M×16 CMOS DRAM (EDO)

Alliance Semiconductor 

AS4C1M16E5

®

DC electrical characteristics

Parameter

Symbol Test conditions

Input leakage current

IIL

0V ≤ Vin ≤ VCC (max)

Pins not under test = 0V

Output leakage

current

IOL

DOUT disabled, 0V ≤ Vout ≤ VCC

(max)

Operating power

supply current

RAS, UCAS, LCAS, Address cycling;

ICC1 tRC=min

TTL standby power

supply current

ICC2

RAS = UCAS = LCAS ≥ VIH,

all other inputs at VIH or VIL

Average power supply

RAS cycling, UCAS = LCAS ≥ VIH,

current, RAS refresh ICC3 tRC = min of RAS low after XCAS

mode or CBR

low.

EDO page mode

average power supply

current

ICC4

RAS = VIL, UCAS or LCAS,

address cycling: tHPC = min

CMOS standby power

supply current

ICC5

RAS = UCAS = LCAS = VCC - 0.2V,

F=0

Output voltage

CAS before RAS

refresh current

VOH IOUT = -5.0 mA

VOL IOUT = 4.2 mA

ICC6

RAS, UCAS or LCAS cycling, tRC =

min

-45

Min Max

-5 +5

-5 +5

– 155

– 2.0

– 145

– 130

– 1.0

2.4 –

– 0.4

– 155

-50

Min Max

-5 +5

-5 +5

– 145

– 2.0

– 135

– 120

– 1.0

2.4 –

– 0.4

– 145

-60

Min Max Unit Notes

-5 +5 µA

-5 +5 µA

– 135 mA 4,5

– 2.0 mA

– 125 mA 4

– 110 mA 4, 5

– 1.0 mA

2.4 – V

– 0.4 V

– 135 mA

4/11/01; v.1.0

Alliance Semiconductor

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