AS4C256K16E0 データシートの表示（PDF） - Alliance Semiconductor
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AS4C256K16E0 Datasheet PDF : 24 Pages
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AS4C256K16E0
®
Absolute maximum ratings
Parameter
Symbol Min
Max
Unit
Input voltage
Output voltage
Power supply voltage
Operating temperature
Storage temperature (plastic)
Soldering temperature × time
Power dissipation
Short circuit output current
Latch-up current
Vin
-1.0
Vout
-1.0
VCC
-1.0
TOPR
0
TSTG
-55
TSOLDER –
PD
–
Iout
–
200
+7.0
+7.0
+7.0
+70
+150
260 × 10
1
50
–
V
V
V
°C
°C
oC × sec
W
mA
mA
NOTE: Stresses greater than those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only and functional
operation of the device at these or any other conditions outside those indicated in the operational sections of this specification is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect reliability.
DC electrical characteristics
Parameter
Symbol Test conditions
Input leakage
current
IIL
0V ≤ Vin ≤ +5.5V
pins not under test = 0V
Output leakage
current
IOL
Operating power
supply current
ICC1
TTL standby power
supply current
ICC2
DOUT disabled,
0V ≤ Vout ≤ +5.5V
RAS, UCAS, LCAS, address cycling;
tRC=min
RAS = UCAS = LCAS = VIH
Average power
supply current, ICC3
RAS refresh mode
EDO page mode
average power
ICC4
supply current
RAS cycling,
UCAS = LCAS = VIH,
tRC = min
RAS=UCAS=LCAS=VIL,
address cycling: tSC = min
CMOS standby
power supply
ICC5
current
RAS=UCAS=LCAS= VCC - 0.2V
CAS-before-RAS
refresh power
ICC6
supply current
RAS, UCAS, LCAS, cycling;
tRC = min
VOH
Output Voltage
VOL
Self refresh
current
ICC7
IOUT = -5.0 mA
IOUT = 4.2 mA
RAS = UCAS = LCAS=VIL,
WE = OE = A0-A8 = VCC-0.2V,
DQ0-DQ15 = VCC-0.2V,
0.2V are open
Shaded areas contain advance information.
-30
-35
-50
Min Max Min Max Min Max Unit Note
-10 10 -10 10 -10 10 µA
-10 10 -10 10 -10 10 µA
– 180 – 160 – 140 mA 1,2
– 2.0 – 2.0 – 2.0 mA
– 200 – 190 – 140 mA 1
– 190 – 180 – 70 mA 1,2
– 1.0 – 1.0 – 1.0 mA
– 200 – 190 – 140 mA 1
2.4 – 2.4 – 2.4 – V
– 0.4 – 0.4 – 0.4 V
– 2.0 – 2.0 – 2.0 mA
4/11/01; v.1.1
Alliance Semiconductor
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