BA00BC0WF データシートの表示（PDF） - ROHM Semiconductor
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BA00BC0WF Datasheet PDF : 2 Pages
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Absolute Maximum Ratings (Ta=25˚C)
Parameter
Symbol
Limits
Unit
Supply voltage
Vcc
Power dissipation
Pd
18
*1
V
620
*2
mW
Operating temperature range Topr
-40 ~ +85
˚C
Storage temperature range
Tstg
-55 ~ +125
˚C
Junction temperature
Tjmax
125
˚C
**21
Do not however exceed Pd.
Mounted on 70mm x 70mm
x
1.6mm
glass-epoxy
PCB
Derating
in
done
at
6.2mW/˚C
for
operating
above
Ta=25˚C
Recommended Operating Conditions (Ta=25˚C)
Parameter
Symbol Min. Typ. Max. Unit
Input voltage
VCC
3.0
-
16.0
V
Output current
Io
-
-
0.5
A
Output voltage
VOUT
1.5
-
12.0
V
Electrical Characteristics (Unless otherwise specified, Ta=25˚C, Vcc=3.3V, Io=150mA, R1=30kΩ, R2=30kΩ)
Parameter
Symbol Min. Typ. Max. Unit
Conditions
Shut down current
ISD
-
0
10
µA Vctl=0V
Vc pin voltage
Vc 1.225 1.250 1.275 V Io=10mA
Output voltage
Vo
- 2.50 -
V Io=150mA
Dropout voltage
∆Vd
- 0.18 0.30 V Vcc=2.5V
Peak output current
Io
0.5
-
-
A
Ripple rejection
R.R.
44 55
-
dB f=120Hz, ein=-20dBV, Io=100mA
Line regulation
Reg.I
-
20
50
mV Vcc=4.5V → 16V
Load regulation
Reg.L
Temperature coefficient of output voltage *1 Tcvo
-
50 150 mV Io=0mA → 500mA
- ±0.02 - % / °C Io=5mA, Tj=0~125°C
Bias current
Ib
-
0.6
-
mA Io=0mA
Short circuit output current
Ios
-
0.4
-
A Vcc=16V
Stand-by ON level
Vth1 2.0
-
-
V ACTIVE MODE, Io=0mA
Stand-by OFF level
Vth2
-
-
0.8
V OFF MODE, Io=0mA
Input high current
Iin
40
80
130
µA Vctl=3V, Io=0mA
• This product is not designed for protection against radioactive rays.
*1 Designed Guarantee.(Outgoing inspection is not done all products.)
* All characteristics are measured with a capacity across the input of 0.33µF and a capacity across the output of 0.22µF.
Measurement is done at Ta Tj, and variations in the parameter of all measurement(expect Temperature Coefficient of Output Voltage)caused by temperature change are not considered.
Application Circuit
BA00BC0WF
Vcc
1
CTL 8
GND 6.7
Vref
TSD
OCP
OUT
3
R2
C5
R1
N.C. 2.4
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