BA891 データシートの表示（PDF） - NXP Semiconductors.
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BA891 Datasheet PDF : 6 Pages
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NXP Semiconductors
Band-switching diode
Product specification
BA891
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-s
thermal resistance from junction to soldering point
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
VF
forward voltage
IR
reverse current
Cd
diode capacitance
rD
diode forward resistance
LS
series inductance
IF = 10 mA
VR = 30 V
f = 1 MHz; note 1; see Fig.2
VR = 1 V
VR = 3 V
f = 100 MHz; note 1; see Fig.3
IF = 3 mA
IF = 10 mA
Note
1. Guaranteed on AQL basis; inspection level S4, AQL 1.0.
VALUE
85
UNIT
K/W
TYP.
−
−
MAX.
1
20
UNIT
V
nA
0.8
1.05
pF
0.65
0.9
pF
0.42
0.7
Ω
0.28
0.5
Ω
0.6
−
nH
1
handbook, halfpage
Cd
(pF)
0.8
MGL479
0.6
0.4
0.2
0
0
10
20 VR (V) 30
f = 1 MHz; Tj = 25 °C.
Fig.2 Diode capacitance as a function of reverse
voltage; typical values.
10
handbook, halfpage
rD
(Ω)
1
MGL478
10−110−1
1
10
IF (mA)
f = 100 MHz; Tj = 25 °C.
Fig.3 Diode forward resistance as a function of
forward current; typical values.
Rev. 04 - 8 January 2008
3 of 6
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