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BAS16TT1G(2010) データシートの表示(PDF) - ON Semiconductor
部品番号
コンポーネント説明
メーカー
BAS16TT1G
(Rev.:2010)
Silicon Switching Diode
ON Semiconductor
BAS16TT1G Datasheet PDF : 5 Pages
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BAS16TT1G
ELECTRICAL CHARACTERISTICS
(T
A
= 25
C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
Forward Voltage
(I
F
= 1.0 mA)
(I
F
= 10 mA)
(I
F
= 50 mA)
(I
F
= 150 mA)
Reverse Current
(V
R
= 75 V)
(V
R
= 75 V, T
J
= 150
C)
(V
R
= 25 V, T
J
= 150
C)
Capacitance
(V
R
= 0, f = 1.0 MHz)
Reverse Recovery Time
(I
F
= I
R
= 10 mA, R
L
= 50
Ω
) (Figure 1)
Stored Charge
(I
F
= 10 mA to V
R
= 6.0 V, R
L
= 500
Ω
) (Figure 2)
Forward Recovery Voltage
(I
F
= 10 mA, t
r
= 20 ns) (Figure 3)
V
F
mV
--
715
--
866
--
1000
--
1250
I
R
m
A
--
1.0
--
50
--
30
C
D
--
2.0
pF
t
rr
--
6.0
ns
QS
--
45
PC
V
FR
--
1.75
V
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