BAS16TT1G(2010) データシートの表示（PDF） - ON Semiconductor

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BAS16TT1G
(Rev.:2010)

Silicon Switching Diode

ON Semiconductor 

1 ns MAX

10%

90%

VF

100 ns

BAS16TT1G

t

trr

tif

Irr

500 Ω

DUT

50 Ω

DUTY CYCLE = 2%

Figure 1. Reverse Recovery Time Equivalent Test Circuit

20 ns MAX

10%

90%

Vf

400 ns

VC

VCM

t

VCM

=

Qa

C

500 Ω DUT

OSCILLOSCOPE

R  10 MΩ

C  7 pF

BAW62

D1

243 pF

100 KΩ

DUTY CYCLE = 2%

t

Figure 2. Stored Charge Equivalent Test Circuit

V

90%

10%

120 ns

V

1 KΩ

450 Ω

Vfr

DUT

50 Ω

t

2 ns MAX

DUTY CYCLE = 2%

Figure 3. Forward Recovery Voltage Equivalent Test Circuit

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