BAS19 データシートの表示（PDF） - Siemens AG

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BAS19

Silicon Switching Diodes

Siemens AG 

BAS 19

… BAS 21

Electrical Characteristics

at TA = 25 ˚C, unless otherwise specified.

Parameter

DC characteristics

Breakdown voltage1)

I(BR) = 100 µA

Forward voltage

IF = 100 mA

IF = 200 mA

Reverse current

VR = VR max

VR = VR max; Tj = 150 ˚C

BAS 19

BAS 20

BAS 21

AC characteristics

Diode capacitance

VR = 0 V, f = 1 MHz

Reverse recovery time

IF = 30 mA, IR = 30 mA, RL = 100 Ω

measured at IR = 3 mA

Test circuit for reverse recovery time

Symbol

Values

Unit

min. typ. max.

V(BR)

VF

IR

120 –

200 –

250 –

–

–

–

–

–

–

–

–

V

–

–

–

1

1.25

100 nA

100 µA

CD

–

–

5

pF

trr

–

–

50 ns

Pulse generator: tp = 100 ns, D = 0.05

tr = 0.6 ns, Rj = 50 Ω

Oscillograph: R = 50 Ω

tr = 0.35 ns

C ≤ 1 pF

1) Pulse test: tp ≤ 300 µs, D = 2 %.

Semiconductor Group

2

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