BAS29 データシートの表示（PDF） - Transys Electronics Limited
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BAS29 Datasheet PDF : 2 Pages
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BAS29, BAS31, BAS35
Average rectified forward current
(averaged over any 20 ms period)
Non-repetitive peak forward current
t = 1 µs; Tj = 25 °C prior to surge; per crystal
t = 1 s; Tj = 25 °C prior to surge; per crystal
Forward current (D)
Repetitive peak reverse energy
tp ≥ 50 µs; f ≤ 20 Hz; Tj = 25 °C
Storage temperature
Junction temperature
THERMAL RESISTANCE
From junction to ambient*
CHARACTERISTICS (per diode)
Tamb = 25 °C unless otherwise specified
Forward voltage
IF = 10 mA
IF = 50 mA
IF = 100 mA
IF = 200 mA
IF = 400 mA
Reverse currents
VR = 90 V
VR = 90 V; Tamb = 150 °C
Reverse avalanche breakdown voltage
IR = 1 mA
Diode capacitance
VR = 0; f = 1 MHz
Reverse recovery time when switched from
IF = 30 mA to IR = 30 mA; RL = 100 Ω;
measured at IR = 3 mA
IF(AV)
IFSM
IF
ERRM
Tstg
Tj
max. 250 mA
max.
max.
max.
3A
0.75 A
250 mA
max. 5.0 mJ
–55 to +150 °C
max. 150 °C
Rth j–a
=
430 K/W
VF
VF
VF
VF
VF
IR
IR
V(BR)R
Cd
<
0.75 V
<
0.84 V
<
0.90 V
<
1.00 V
<
1.25 V
<
100 nA
<
100 µA
120 to 175 V
<
35 pF
trr
<
75 ns
* When mounted on a ceramic substrate of 8 mm × 10 mm × 0.7 mm.
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