BAS16 データシートの表示（PDF） - NXP Semiconductors.

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BAS16

High-speed switching diodes

NXP Semiconductors. 

NXP Semiconductors

8. Test information

BAS16 series

High-speed switching diodes

RS = 50 Ω

V = VR + IF × RS

D.U.T.

IF

SAMPLING

OSCILLOSCOPE

Ri = 50 Ω

VR

mga881

tr

tp

10 %

90 %

input signal

t

+ IF

trr

t

(1)

output signal

(1) IR = 1 mA

Input signal: reverse pulse rise time tr = 0.6 ns; reverse voltage pulse duration tp = 100 ns; duty cycle δ = 0.05

Oscilloscope: rise time tr = 0.35 ns

Fig 5. Reverse recovery time test circuit and waveforms

I

1 kΩ

450 Ω

RS = 50 Ω

D.U.T.

OSCILLOSCOPE

Ri = 50 Ω

I

90 %

10 %

tr

tp

input signal

V

VFR

t

t

output signal

mga882

Input signal: forward pulse rise time tr = 20 ns; forward current pulse duration tp ≥ 100 ns; duty cycle δ ≤ 0.005

Fig 6. Forward recovery voltage test circuit and waveforms

9. Package outline

2.5 1.4

2.1 1.2

3.0

2.8

3

1.1

0.9

0.45

0.15

3.6 2.7

3.4 2.5

1.7

1.5

1

1.2

1.0

0.55

0.35

1

1.9

Dimensions in mm

2

0.48

0.38

0.15

0.09

04-11-04

Dimensions in mm

2

0.70

0.55

0.25

0.10

04-11-29

Fig 7. Package outline BAS16 (SOT23/TO-236AB)

Fig 8. Package outline BAS16H (SOD123F)

BAS16_SER_5

Product data sheet

Rev. 05 — 25 August 2008

© NXP B.V. 2008. All rights reserved.

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