BAW56 データシートの表示（PDF） - Philips Electronics
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BAW56 Datasheet PDF : 12 Pages
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Philips Semiconductors
High-speed double diode
Product specification
BAW56
FEATURES
• Small plastic SMD package
• High switching speed: max. 4 ns
• Continuous reverse voltage:
max. 75 V
• Repetitive peak reverse voltage:
max. 85 V
• Repetitive peak forward current:
max. 450 mA.
DESCRIPTION
The BAW56 consists of two
high-speed switching diodes with
common anodes, fabricated in planar
technology, and encapsulated in the
small SOT23 plastic SMD package.
PINNING
PIN
1
2
3
DESCRIPTION
cathode (k1)
cathode (k2)
common anode
handbook, 4 columns
2
1
APPLICATIONS
• High-speed switching in thick and
thin-film circuits.
2
1
3
Top view
3
MAM206
Marking code: A1p = made in Hong Kong; A1t = made in Malaysia.
Fig.1 Simplified outline (SOT23) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
Per diode
VRRM
VR
IF
repetitive peak reverse voltage
continuous reverse voltage
continuous forward current
IFRM
repetitive peak forward current
IFSM
non-repetitive peak forward
current
Ptot
total power dissipation
Tstg
storage temperature
Tj
junction temperature
single diode loaded; note 1;
see Fig.2
double diode loaded; note 1;
see Fig.2
square wave; Tj = 25 °C prior to
surge; see Fig.4
t = 1 µs
t = 1 ms
t=1s
Tamb = 25 °C; note 1
Note
1. Device mounted on an FR4 printed-circuit board.
MIN. MAX. UNIT
−
85
V
−
75
V
−
215
mA
−
125
mA
−
450
mA
−
4
A
−
1
A
−
0.5
A
−
250
mW
−65
+150 °C
−
150
°C
1999 May 11
2
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