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BAW75-TAP データシートの表示(PDF) - Daesan Electronics Corp.

部品番号
コンポーネント説明
メーカー
BAW75-TAP
DAESAN
Daesan Electronics Corp. DAESAN
BAW75-TAP Datasheet PDF : 2 Pages
1 2
BAW75
Features
· Silicon epitaxial planar diode
· Fast switching diodes
· 500mW power dissipation
· This diode is also available in the Mini-MELF case with
the type designation LL4148
SMALL SIGNAL
SWITCHING DIODES
DO-35(GLASS)
0.075(1.9)
MAX.
DIA.
1.083(27.5)
MIN.
0.154(3.9)
MAX.
Mechanical Data
· Case: DO-35 glass case
· Polarity: Color band denotes cathode end
· Weight: Approx. 0.13 gram
0.020(0.52)
MAX.
DIA.
1.083(27.5)
MIN.
Dimensions in inches and (millimeters)
Maximum Ratings And Electrical Characteristics
(Ratings at 25ambient temperature unless otherwise specified)
Type
B AW75
Type Differentiation
VR R M = 35 V
Ordering C ode
B AW75±TAP
R emarks
A mmopa c k
A bs olute Maximum R atings
Tj = 25 C
P arameter
R epetitive peak revers e voltage
R evers e voltage
P eak forward s urge current
R epetitive peak forward current
F orward current
Average forward current
P ower dis s ipation
J unction temperature
S torage temperature range
Tes t C onditions
tp=1 s
V R =0
l=4 mm, T L=45
l=4 mm, T L 25
Type
S ymbol Value
U nit
VRRM
35
V
VR
25
V
IFS M
2000
mA
IFR M
450
mA
IF
300
mA
IFAV
150
mA
PV
440
mW
PV
500
mW
Tj
200
Tstg ±65...+200
Maximum T hermal R es is tanc e
Tj = 25
P arameter
J unction ambient
Tes t C onditions
l=4 mm, T L=cons tant
S ymbol
Va lue
U nit
R thJ A
350
K /W

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